Semiconductor device having a surface with a barrier layer of Ti

Details Semiconductor device having a surface with a barrier layer of Ti Semiconductor device having a surface with a barrier layer of Ti

1993-04-27

1994-11-01

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257764, 257767, 257770, 257763, H01L 2348

Patent

active

053609948

ABSTRACT:
A semiconductor device with a semiconductor body (1) whose surface (4) is provided with a barrier layer (8) of Ti.sub.x W.sub.1-x, with 0.1<x<0.3. The barrier layer (8) is used, for example, between contact zones (3) of silicon or metal silicides provided in the semiconductor body (1) and conductor tracks (9) of aluminium provided on the surface (4) with the purpose of counteracting chemical reactions between silicon and aluminium. According to the invention, the barrier layer (8) is so deposited that in this layer the distance between the (100) lattice faces of tungsten is greater than 2.25.ANG.. It is achieved in this way that the barrier layer (8) has equally good or even better barrier properties as/than a Ti.sub.x W.sub.1-x layer which has been exposed to air for a few days. It is found that, if the barrier layer (8) is deposited by means of a sputter deposition process, the distance between the (100) lattice faces of W is determined by the voltage applied to the sputter target during deposition.

REFERENCES:
patent: 4491860 (1985-01-01), Lim
patent: 5019234 (1991-05-01), Harper
patent: 5028531 (1991-07-01), Dohjo et al.
R. S. Nowicki et al. "Studies of the Ti-W/AU Metallization on Aluminum" Apr. 7, 1978 Thin Solid Films 53 pages, 195-205.
P. B. Ghate et al. "Application of Ti:W Barrier Metallization for Integrated Circuits" Thin Solid Films, 53 Apr. 28, 1978 pp. 117-128.

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