Photoresist

Radiation imagery chemistry: process – composition – or product th – Imaged product – Including resin or synthetic polymer

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G03C 300

Patent

active

059485787

ABSTRACT:
A photoresist is applied on a substrate and exposed using a reduction optical system. The photoresist is adapted to have a non-linear optical effect in which the light absorption coefficient or the photochemical reaction efficiency changes non-linearly with respect to light intensity, the photoresist reacts to the second harmonic or the tertiary harmonic, or it presents a self convergence effect.

REFERENCES:
patent: 5045419 (1991-09-01), Okumura
patent: 5131068 (1992-07-01), Kanarian et al.
patent: 5142605 (1992-08-01), Diemeer et al.
"Synthesis of New Metal-Free Diazonium Salts and Their Applications to Mirolithography", Journal of Photopolymer Science and Technology, vol. 2, No. 1 (1989), by Shou-ichi Uchino et al, pp. 59-65, 1989. Abstract Only.
"Deep UV Exposure of Ag.sub.2 Se/GeSe.sub.2 Utilizing an Excimer Laser", IEEE Electron Device Letters, vol. EDL-5, No. 1, by K.J. Polasko et al, pp. 24-26, 1984.

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