Fishing – trapping – and vermin destroying
Patent
1987-12-02
1989-04-04
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 34, 437 57, 357 233, 357 44, 156643, 156653, 156652, 148DIG131, 148DIG106, H01L 21265, H01L 2170, H01L 2700
Patent
active
048187143
ABSTRACT:
An MOS structure and a method for making same, including the formation of el-shaped shielding members used to form one or more lightly doped drain regions to avoid short channel and punch-through problems is disclosed which comprises forming a shielding layer of an insulating material over a gate electrode on a substrate; forming another layer of a dissimilar material over the shielding layer; anisotropically etching the layer of dissimilar material to form spacer portions adjacent the sidewalls of the gate electrode; removing the portions of the shielding layer not masked by the spacer portions, leaving one or more el-shaped shielding members; removing the spacer portions; N+ or P+ implanting the substrate at a sufficiently low energy to prevent penetration of the dopant through the el-shaped shielding member to form a highly doped source/drain region in the substrate not shielded by the el-shaped shielding member or the gate electrode; N- or P- implanting the substrate at a sufficiently high energy to penetrate through the el-shaped shielding member to form a lightly doped source/drain region in the portion of the substrate adjacent the P+ or N+ source/drain regions and separating the channel region of the substrate beneath the gate electrode from the P+ or N+ source/drain region.
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Advanced Micro Devices , Inc.
Hearn Brian E.
Taylor John P.
Wilczewski M.
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