Techniques useful in fabricating semiconductor devices having su

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437 33, 437 90, 148DIG10, 148DIG117, 357 34, H01L 21205, H01L 2176, H01L 21265

Patent

active

048187135

ABSTRACT:
Submicron resolution in the fabrication of transistors is obtained by using sidewall techniques. The techniques described remove the sidewalls after oxidizing the materials between the sidewalls and the openings so formed by the removal are used as a mask for subsequent substrate modification by either diffusion or ion implantation.

REFERENCES:
patent: 3833429 (1974-09-01), Monma et al.
patent: 4236294 (1980-12-01), Anantha et al.
patent: 4309812 (1982-01-01), Horng et al.
patent: 4338138 (1982-07-01), Cavaliere et al.
patent: 4592792 (1986-06-01), Corboy, Jr. et al.
patent: 4640721 (1987-02-01), Uehara et al.
patent: 4641416 (1987-02-01), Iranmanesh et al.
patent: 4678537 (1987-07-01), Ohuchi
patent: 4698316 (1987-10-01), Corboy, Jr. et al.
patent: 4728624 (1988-03-01), Silvestri et al.
patent: 4729965 (1988-03-01), Tamaki et al.
patent: 4749441 (1988-06-01), Christenson et al.
patent: 4758530 (1988-07-01), Schubert
patent: 4758531 (1988-07-01), Beyer et al.
patent: 4760036 (1988-07-01), Schubert
Ghandhi, VLSI Fabrication Principles, John Wiley and Sons, 1983, pp. 373, 421-423, 434-435.
Prospects of SST Technology for High Speed LSI, T. Sakai et al., IEDM, '85, pp. 18-21.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Techniques useful in fabricating semiconductor devices having su does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Techniques useful in fabricating semiconductor devices having su, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Techniques useful in fabricating semiconductor devices having su will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-180310

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.