Method for increased metal interconnect reliability in situ form

Details Method for increased metal interconnect reliability in situ form Method for increased metal interconnect reliability in situ form

1996-02-05

1997-12-23

Graybill, David

Fishing, trapping, and vermin destroying

437194, 437190, 437245, H01L 2144

Patent

active

057007187

ABSTRACT:
Disclosed is a method for in situ formation of titanium aluminide. The disclosed method is directed to overcoming voiding problems which result in conventional titanium and aluminum metal interconnect stacks. The steps of the method comprise first providing a silicon substrate, which typically comprises an in-process integrated circuit wafer. Next, an insulating passivation layer is provided on the silicon substrate. The next step is the sputtering of a titanium layer of a given thickness over the passivation. Subsequently, an aluminum film of three times the thickness of the titanium layer is sputtered over the titanium layer. The next step comprises annealing the titanium layer and the aluminum film in situ in a metal anneal chamber to form titanium aluminide. Following the in situ anneal, the remainder of the needed aluminum is sputtered over the titanium aluminide and a further passivation layer of titanium nitride is then sputtered over the aluminum. Finally, the entire wafer is annealed in a furnace, thereby completing the metal interconnect stack.

REFERENCES:
patent: 4154874 (1979-05-01), Howard et al.
patent: 5225372 (1993-07-01), Sawkar et al.
patent: 5380678 (1995-01-01), Yu et al.
patent: 5494860 (1996-02-01), McDevitt et al.
Ono et al. "Development of a Planarized Al-Si Contact Filling Technology" 1990 Proc. 7th International IEEE VLSI Multilevel Interconnect Conf. (Jun. 1990, Calif.) pp. 76-82.

Affiliated with

Also associated with

Rating

Method for increased metal interconnect reliability in situ form does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for increased metal interconnect reliability in situ form, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for increased metal interconnect reliability in situ form will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1802326