Method for forming low contact resistance contacts, vias, and pl

Fishing – trapping – and vermin destroying

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437192, 437193, 437200, H01L 2128

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active

057007160

ABSTRACT:
Disclosed is a novel contact structure comprising an underlying layer of titanium silicide, an intermediate layer of titanium boride, and an overlying layer of polysilicon. Also disclosed is a method for forming the contact structure which comprises depositing a titanium layer in the bottom of a contact opening having oxide insulation sidewalls, forming an overlying layer of polysilicon above the titanium layer, and annealing the two layers together. The resulting contact structure is formed with fewer steps than contact structures of the prior art and without the need for additional steps to achieve uniform sidewall coverage, due to high adhesion of the overlying layer of polysilicon with oxide insulation sidewalls of the contact opening. The contact structure has low contact resistance, and provides a suitable diffusion barrier due to a high melting point.

REFERENCES:
patent: 4624864 (1986-11-01), Hartmann
patent: 4829024 (1989-05-01), Klein et al.
patent: 5420074 (1995-05-01), Ohshima
patent: 5447875 (1995-09-01), Moslehi
patent: 5451545 (1995-09-01), Ramaswami et al.
patent: 5500554 (1996-03-01), Sato
S. Wolf "Silicon Processing for the VLSI Era, vol. 1", Lattice Press, 1986, pp. 177-182.

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