Method for fabricating an optical semiconductor device

Details Method for fabricating an optical semiconductor device Method for fabricating an optical semiconductor device

1993-09-07

1994-11-01

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

148DIG95, H01L 21205

Patent

active

053607635

ABSTRACT:
In the first method, an etching stop layer and a current blocking layer are grown on a semiconductor substrate by MOVPE. Next, the current blocking layer is etched on a region of the etching-stop layer corresponding to an active region, and the active region is formed in the etched portion by the selective growth using MOVPE. In the second method, a ridge is formed on a semiconductor substrate, and a doublehetero structure is grown on the ridge by MOVPE. On the active layer, a p-cladding layer is grown to be covered on the whole surface with (111) B plane entirely. The (111) B plane has the growth speed suppressing effect, so that no semiconductor layer is grown on the p-cladding layer, while a current blocking layer is grown on other regions.

REFERENCES:
patent: 5128276 (1992-07-01), Ambrosius et al.
patent: 5237639 (1993-08-01), Kato et al.
patent: 5250462 (1993-10-01), Sasaki et al.
patent: 5278094 (1994-01-01), Lievin et al.
patent: 5284791 (1994-02-01), Sakata et al.
"Novel Structure Photonic Devices Using Selective MOVPE Growth" by Sasaki et al. NEC Res. & Develop. vol. 33, No. 3, Jul. 1992, pp. 372-382.
ECOC '92, Sep. 27, 1993, pp. 177 to 180, "1.55.mu.m Wavelength-Tunable MQW-DBR-LDs Employing Bandgap Energy Control in All Selective MOVPE Growth".
Journal of Crystal Growth 107 (1991), pp. 226 to 230, "Lateral and Longitudinal Patterning of Semiconductor Structures by Crystal Growth on Nonpopular and Dielectric-Masked GaAs Substrate: Application to Thickness-Modulated Waveguide Structures".

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