Vapor phase epitaxial growth method of a compound semiconductor

Details Vapor phase epitaxial growth method of a compound semiconductor Vapor phase epitaxial growth method of a compound semiconductor

1993-03-30

1994-11-01

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 89, 117953, H01L 2120

Patent

active

053607600

ABSTRACT:
A vapor phase epitaxial growth method of a compound semiconductor is provided. On a semiconductor substrate held by a holder, a first epitaxial layer is grown using a first growth gas and then, a separator gas is emitted to the vicinity of the substrate to separate the substrate from the first growth gas. After the separator gas is removed from the vicinity, a second growth gas is supplied to the vicinity to form a second epitaxial layer on the first epitaxial layer. Since the substrate is separated by the separator gas from the first growth gas, transition regions of crystal composition and carrier concentration are difficult to be generated.

REFERENCES:
"High-Speed Planar-Structure InP/InGaAsP/InGaAs Avalanche Photodiode Grown by VPE", Y. Sugimoto, Electronics Letters, 2nd Aug. 1984, vol. 20, No. 16, pp. 653-654.

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