Method of fabricating lateral bipolar transistors

Fishing – trapping – and vermin destroying

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437 32, 437 55, 437917, 437 27, 148DIG96, H01L 21265

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active

053607503

ABSTRACT:
The present invention discloses a method for manufacturing lateral bipolar transistors of integrated circuits which have expanded collector regions, thereby raising the gain of the lateral bipolar transistors while reducing cycle time for manufacture. As a result, the performance of the transistors is improved and the cost of manufacture is reduced.

REFERENCES:
patent: 3919005 (1975-11-01), Schinella et al.
patent: 4064526 (1977-12-01), Tokumaru et al.
patent: 4110126 (1978-08-01), Bergeron et al.
patent: 4120707 (1978-10-01), Beasom
patent: 4956305 (1990-09-01), Arndt
patent: 4966858 (1990-10-01), Masquelies et al.

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