Fishing – trapping – and vermin destroying
Patent
1994-02-09
1994-11-01
Thomas, Tom
Fishing, trapping, and vermin destroying
437 40, 437 67, 437911, H01L 4900
Patent
active
053607465
ABSTRACT:
Between electrodes (9) and (10) are formed a p.sup.+ substrate (2), an n.sup.- epitaxial layer (1) having a protruding portion (3), an n.sup.+ diffusion region (4) and p.sup.+ diffusion regions (13). Control electrodes (6) are formed on insulating films (5) on opposite sides of the protruding portion (3) and n.sup.+ diffusion region (4). The potential at the control electrodes (6) is increased or decreased with the potential at an electrode (10) increased relative to an electrode (9) to generate potential barrier or conductivity modulation in the n.sup.- epitaxial layer (1), whereby a semiconductor device turns off or on. Introduced holes are drawn through the p.sup.+ diffusion regions (13) when the semiconductor device turns off, to provide a small resistance and a short distance when the holes are drawn without changes in the area of the n.sup.+ diffusion region (4). This permits the semiconductor device to have small switching loss and high switching speed with a low ON-voltage.
REFERENCES:
patent: 4713358 (1987-12-01), Bulat et al.
patent: 4904609 (1990-02-01), Temple
patent: 5106770 (1992-04-01), Bulat et al.
patent: 5173435 (1992-12-01), Harada
patent: 5223442 (1993-06-01), Kitagawa et al.
patent: 5248622 (1993-09-01), Matsuda et al.
Mitsubishi Denki & Kabushiki Kaisha
Nguyen Tuan
Thomas Tom
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