Transistor in a semiconductor device and method of making the sa

Fishing – trapping – and vermin destroying

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437 41, 437 46, H01L 21265

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active

057007004

ABSTRACT:
The present invention relates to a transistor in a semiconductor device and method of making thereof which can improve the driving speed, by forming the junction region thicker than the channel and LDD regions so as to reduce the resistance itself of the junction region.

REFERENCES:
patent: 4805546 (1989-02-01), Moniwa et al.
patent: 5198379 (1993-03-01), Adan
patent: 5405795 (1995-04-01), Beyer
patent: 5525552 (1996-06-01), Huang

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