Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1995-03-24
1999-09-07
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 94, 117 95, C30B 2518
Patent
active
059481617
ABSTRACT:
In fabricating a semiconductor device, a semiconductor layer containing Al and a cap layer not containing Al are successively grown on a semiconductor substrate and are placed in a halogen gas environment where a chemical reaction between a halogen and an oxide film naturally formed on the cap layer removes the oxide film. Then, without exposing the layer to the atmosphere, the halogen gas environment is replaced with a dry-etching environment and the cap layer is dry-etched to a desired depth. Then, without exposing a semiconductor layer to the atmosphere, the dry-etching environment is replaced with a crystal growth environment. Subsequently, another semiconductor layer is grown on the semiconductor layer. A regrowth interface of excellent cleanliness is realized and the crystallinity of the regrown semiconductor layer is improved.
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Kunemund Robert
Mitsubishi Denki & Kabushiki Kaisha
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