Method for etching a silicon substrate

Details Method for etching a silicon substrate Method for etching a silicon substrate

1985-07-23

1987-05-12

Valentine, Donald R.

Chemistry: electrical and wave energy

Processes and products

Electrostatic field or electrical discharge

20412943, C25F 312

Patent

active

046647627

ABSTRACT:
A method of electrochemically etching a silicon substrate of a diaphragm type silicon pressure sensor is described. The etching process is accelerated by applying a positive voltage to, for example, an electrode of a P-type silicon layer of the substrate to be etched while the substrate is in an etchant solution.

REFERENCES:
patent: 2656496 (1953-10-01), Sparks
patent: 3268781 (1966-08-01), LeCan et al.
patent: 3287239 (1966-11-01), Froschle et al.
patent: 3518131 (1970-06-01), Glendinning

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