Method of making semiconductor device having improved Schottky-b

Details Method of making semiconductor device having improved Schottky-b Method of making semiconductor device having improved Schottky-b

1981-06-18

1983-02-15

Weisstuch, Aaron

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

156649, 204192C, C23C 1500

Patent

active

043740120

ABSTRACT:
A semiconductor device having an improved non-diffusive Schottky-barrier junction and metallization layers and method for producing the same. A thin layer of a Schottky-barrier forming metal such as platinum is sputter deposited upon a hot gallium arsenide substrate, thereby impact alloying a portion of the Schottky-barrier forming metal with the gallium arsenide material. A refractive metal such as titanium is then sputtered above the Schottky-barrier forming layer at a power level sufficient to alloy the remaining Schottky-barrier forming metal with the refractive metal. A highly conductive layer such as gold is then sputter deposited over the refractive layer to provide ohmic contact. The invention may be used to particular advantage in microwave diode and field effect transistor devices.

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Electronics Letters, vol. 11, No. 18, Sep. 4, 1975, High Power C Band Impatt Diodes, pp. 430-431.

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