Coherent light generators – Particular active media – Semiconductor
Patent
1988-12-28
1990-02-27
Sikes, William L.
Coherent light generators
Particular active media
Semiconductor
357 4, 357 16, 357 17, H01S 319
Patent
active
049052462
ABSTRACT:
A semiconductor laser device containing a laser oscillation-operating area which comprises a Ga.sub.1-x Al.sub.x As (0.ltoreq.x.ltoreq.1) quantum well active layer, Ga.sub.1-y Al.sub.y As optical guiding layers interposing the quantum well active layer therebetween, and Ga.sub.1-z Al.sub.z As cladding layers superposed on the optical guiding layers, respectively, wherein the AlAs mole fraction y at the area of each of the optical guiding layers positioned in the vicinity of the interface of the optical guiding layers and the quantum well active layer meets the relationships y-z.gtoreq.0.3 and z-y.ltoreq.0.25.
REFERENCES:
patent: 4745612 (1988-05-01), Hayakawa et al.
patent: 4750183 (1988-06-01), Takahashi et al.
patent: 4787089 (1988-11-01), Hayakawa et al.
Lindstrom et al., (1983), Applied Physics Letters, 42(2):134-136.
Tokuda et al., (1986), Journal of Applied Physics, 60(8):2729-2734.
Blood et al., (1985), Applied Physics Letters, 47(3):193-195.
Patent Abstracts of Japan, (Jul. 28, 1987), vol. 11, No. 231, E-527, 2678.
K. Hamada et al., IEEE Journal of Quantum Electronics, vol. QE-21, No. 6, pp. 623-628, (1985).
T. Murakami et al., IEEE Journal of Quantum Electronics, vol. QE-23, pp. 712-719, (1987).
D. R. Scifres et al., Applied Physics Letters, vol. 41, pp. 1030-1032, (1982).
D. R. Scifres et al., Electronics Letters, vol. 19, pp. 169-171, (1983).
W. T. Tsang, Applied Physics Letters, vol. 39, No. 10, pp. 786-788, (1981).
H. Iwamura, T. Saku, T. Ishibashi, K. Otsuka, Y. Horikoshi, Electronics Letters, vol. 19, No. 5, pp. 180-181, (1983).
K. Hamada et al., IEEE Journal of Quantum Electronics, vol. QE-23, pp. 623-628, (1987).
Hayakawa Toshiro
Kondo Masafumi
Suyama Takahiro
Takahashi Kosei
Epps Georgia Y.
Sharp Kabushiki Kaisha
Sikes William L.
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