Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1985-09-25

1987-05-12

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29578, 29591, 148 15, 148175, 148188, 148DIG140, 357 65, H01L 21265

Patent

active

046638253

ABSTRACT:
A method of manufacturing a semiconductor device comprises the steps of forming a gate electrode on a silicon substrate of a p-conductivity type and source and in the drain regions of an n-conductivity type substrate so as to interpose the gate electrode therebetween; depositing silicon on the source and drain regions to form a polysilicon wiring layer; and ion-implanting an impurity to an interface between the source and drain regions and the polysilicon wiring layer at acceleration voltage of 40 keV and a dose of 5.times.10.sup.15 cm.sup.-2 to mechanically break down an oxide film formed at said interface.

REFERENCES:
patent: 4450620 (1984-05-01), Fuls et al.
patent: 4457972 (1984-07-01), Griffith et al.
patent: 4502206 (1985-03-01), Schnable et al.
patent: 4502207 (1985-03-01), Ohshima et al.
patent: 4526624 (1985-07-01), Tombrello et al.
Tsaur et al., in Interfaces & Contacts, Ed. Ludeke et al., North Holland, 1982, N.Y. p. 385.
Tombrello, Nucl. Instr. & Methods, 218 (1983) p. 679.

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