Semiconductor laser and method for manufacturing the same

Details Semiconductor laser and method for manufacturing the same Semiconductor laser and method for manufacturing the same

1994-06-10

1996-10-29

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

385 88, H01S 318, G02B 636

Patent

active

055703852

ABSTRACT:
A semiconductor laser including a compound semiconductor substrate of an n-type, a semiconductor laser chip region defined at a center portion of an upper portion of the compound semiconductor substrate and provided at its front and rear surfaces with mirror surfaces for oscillating laser beams, and a pair of guide regions defined at opposite sides of the chip region, respectively, to be in contact with the semiconductor laser chip region. The chip region has a shape of a hexahedron. Together with the front and rear surfaces of the chip region, the guide regions define a cavity for coupling the chip region with external elements at the compound semiconductor substrate. The semiconductor laser also includes a first electrode formed over the chip region and guide regions and adapted to receive an electric power for generating laser beams and a second electrode formed beneath the semiconductor substrate and adapted to receive the electric power for generating laser beams, together with the first electrode.

REFERENCES:
patent: 4466696 (1984-08-01), Carney
patent: 4675074 (1987-06-01), Wada et al.
patent: 4716570 (1987-12-01), Yoshida et al.
patent: 4731344 (1988-03-01), Canning et al.
patent: 5159603 (1992-10-01), Kim

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