High voltage Schottky barrier diode

Details High voltage Schottky barrier diode High voltage Schottky barrier diode

1977-07-21

1979-01-09

James, Andrew J.

357 22, H01L 2948, H01L 2956, H01L 2964

Patent

active

041341236

ABSTRACT:
An improved high voltage Schottky barrier diode includes a semiconductor layer having two adjacent sublayers of the same type conductivity but different doping concentrations. A plurality of isolated discrete regions of a second type conductivity opposite to that of the first are provided along the boundary region between the sublayers and beneath the Schottky junction. The invention results in an improved high voltage Schottky diode in which the reverse characteristics are substantially enhanced.

REFERENCES:
patent: 3252003 (1966-05-01), Schmidt
patent: 3513366 (1970-05-01), Clark
patent: 3614560 (1971-10-01), Anantha
patent: 3646411 (1972-02-01), Iwasa
patent: 3999281 (1976-12-01), Goronkin et al.

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