Semiconductor light emitter

Details Semiconductor light emitter Semiconductor light emitter

1994-07-21

1996-07-16

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 43, 257 98, H01S 318, H01L 3300

Patent

active

055374336

ABSTRACT:
A semiconductor light emitter, such as the light-emitting diode or the semiconductor laser, having a structure in which a light emitting area or an active layer; a transparent layer which is pervious to light radiated from the light emitting area or the active layer; and an opaque layer or an opaque substrate which is impervious to the radiated light are arranged in order or in the inverse order. The semiconductor light emitter includes (a) total reflection layer(s) arranged between the transparent layer(s) and the opaque layer(s) so as to come into contact with the transparent layer. The refractive index of the total reflection layer is smaller than that of the transparent layer. Therefore, at least one part of light, which has been radiated from the light emitting area or the active layer and which has been reflected by the total reflection layer thereafter, is either radiated outward from side surfaces of the transparent layer or returned to the active layer.

REFERENCES:
patent: 4563764 (1986-01-01), Kuroda et al.
patent: 4590501 (1986-05-01), Scholl
patent: 4766470 (1988-08-01), Scholl et al.
patent: 4779280 (1988-10-01), Sermage et al.
patent: 4990970 (1991-02-01), Fuller
patent: 5319219 (1994-06-01), Cheng et al.
patent: 5363395 (1994-11-01), Gaines et al.
Dialog.TM. English Patent Abstract of Japanese Laid-Open Patent Publication No. 57-49284 (Mar. 23, 1982) (2 pages total).

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