Semiconductor light emitting device with high light emission eff

Coherent light generators – Particular active media – Semiconductor

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257103, H01S 319

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06081540&

ABSTRACT:
The invention provides a semiconductor light emitting device in which a light emitting layer is formed on a semiconductor substrate in a state of lattice mismatching with this semiconductor substrate, and by which light emission of high efficiency is obtained. A semiconductor material used as a base material of the light emitting layer is doped with impurities serving as radiative recombination centers. The semiconductor substrate is a GaP substrate and the semiconductor material as the base material of the light emitting layer is (Al.sub.x Ga.sub.1-x).sub.1-y In.sub.y P. This (Al.sub.x Ga.sub.1-x).sub.1-y In.sub.y P material is doped with nitrogen, oxygen, selenium, sulfur or tellurium as a first impurity for forming a donor level, and also with magnesium, zinc or cadmium as a second impurity for forming an acceptor level.

REFERENCES:
patent: 6015719 (2000-01-01), Kish, Jr. et al.
H. Sugawara et al, "High-brightness IN GaAlP green light-emitting diodes", Appl. Phys. Lett., vol. 61, No. 15, Oct. 12, 1992, pp. 1775-1777.
F. A. Kish, et al, "Very high-efficiency semiconductor water-bonded transparent substrate (Al.sub.x,Ga.sub.1-x).sub.0.5 In.sub.0.5 P/GaP light-emitting diodes", Appl. Phys. Lett. vol. 64, No. 21, May 23, 1994, pp. 2839-2841.
Torchinskaya et al, "Transformation of Deep Centers during Degradation of GaP:N/GaP:Zn:O Light-Emitting Diodes", Sov.Phys. Semicond. 20(4), Apr. 1986, pp. 442-446.
Sturge, "A New Interimpurity Recombination in GaP; Revised Values for Acceptor Binding Energies", Appl. Phys. Lett. 32(1), Jan. 1, 1978, pp. 49-51.
Bhargava et al, "Mg-O Complexes in GaP-A Yellow Diode", Appl. Phys. Lett., vol. 20, No. 6, Mar. 15, 1972, pp. 227-229.
Scott, "Excitation Spectra of Shallow Donors in GaP", Journal of Applied Physics, vol. 48, No., Jul. 1977, pp. 3173-3175.

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