High-density nonvolatile memory cell

Details High-density nonvolatile memory cell High-density nonvolatile memory cell

1999-05-26

2000-06-27

Nguyen, Viet Q.

Static information storage and retrieval

Floating gate

Particular connection

36518501, 257315, 257316, G11C 1604

Patent

active

060814497

ABSTRACT:
A compact nonvolatile programmable memory cell. The memory cell has a floating gate (118), control gate (123), drain (108), and source regions (112). The memory cell is an electrically erasable programmable read only memory (EEPROM) cell or a Flash memory cell. Data may be stored the memory cell of the present invention for the required lifetime of the memory cell usage, and data is retained even when power is removed. The memory cell of the present invention has a substantially transverse or vertical channel (140), relative to a surface of a substrate. The memory may be used to create very high-density memory arrays.

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