Patent
1985-07-22
1987-04-14
Munson, Gene M.
357 236, 357 55, H01L 2702, H01L 2978, H01L 2906, G11C 1124
Patent
active
046582835
ABSTRACT:
Herein disclosed is a DRAM which has such a carrier trapping region around a memory cell array as can trap minority carriers deep in a semiconductor substrate so that the minority carriers to be generated in the semiconductor substrate by alpha rays may be sufficiently trapped. The memory cell of the DRAM has a capacitor which is partially formed of the semiconductor substrate. The carrier trapping region is formed by making use of trenches or a well region.
REFERENCES:
patent: 4163245 (1979-07-01), Kinoshita
patent: 4353086 (1982-10-01), Jaccodine et al.
patent: 4491858 (1985-01-01), Kawamoto
patent: 4497043 (1985-01-01), Iizuka et al.
Hitachi , Ltd.
Hitachi Microcomputer & Engineering, Ltd.
Munson Gene M.
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