Surface emitting semiconductor laser

Coherent light generators – Particular active media – Semiconductor

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372 96, 372 99, 372 46, H01S 319

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053633938

ABSTRACT:
A surface emitting semiconductor laser of a laminated structure having at least a light emitting active layer sandwiched between a dielectric film multi-layer mirror and a p-type semiconductor multi-layer mirror on a semiconductor substrate. The energy .DELTA.Ec of conduction band discontinuity is higher than the energy .DELTA.Ev of valence band discontinuity between at least two kinds of semiconductor layers with different refractive indices constituting the p-type semiconductor multi-layer mirror. On the other hand, the energy .DELTA.Ev of valence band discontinuity is higher than the energy .DELTA.Ec of conduction band discontinuity between at least two kinds of semiconductor layers with different refractive indices constituting the n-type semiconductor multi-layer mirror.

REFERENCES:
patent: 4943970 (1990-07-01), Bradley
patent: 4949350 (1990-08-01), Jewell et al.
patent: 5018157 (1991-05-01), Deppe et al.
patent: 5038356 (1991-08-01), Botez et al.
patent: 5170407 (1992-12-01), Schubert et al.
patent: 5208820 (1993-05-01), Kurihara et al.
patent: 5216685 (1993-06-01), Asada
IEEE Journal of Quantum Electronics, vol. 27, No. 6, pp. 1332-1346, Jun. 1991, Jewell et al. "Vertical-Cavity Surface-Emitting Lasers: Design, Growth, Fabrication, Characterization".

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