Sense amplifier circuit for semiconductor memory device

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307355, 307495, 330300, H03K 524, G11C 706

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active

046581596

ABSTRACT:
A sense amplifier circuit for use in an MOS memory device, including bipolar sensing transistor, MOS load transistors connected to respective of the bipolar sensing transistors, and a constant current source, whereby high switching speed and high sensitivity are achieved.

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Chan, "Bit-Select Sense Amplifier"; IBM Tech. Discl. Bull.; vol. 24, No. 11A, pp. 5654-5656; 4/1982.

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