Split polysilicon SRAM cell

Details Split polysilicon SRAM cell Split polysilicon SRAM cell

1994-11-16

1996-10-29

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257900, 257382, 257904, H01L 2348, H01L 2978

Patent

active

055699626

ABSTRACT:
An SRAM semiconductor device comprises a first layer, a second layer and a third layer of polysilicon are separated by dielectric layers formed on a substrate, and a split gate structure with transistors formed in different polysilicon levels. Preferably, the split gate structure includes pull down transistors and pass gate transistors formed in different polysilicon levels; the second polysilicon layer extends into contact with the substrate; the second polysilicon layer contacts the third polysilicon layer in an interconnection region; and the third polysilicon layer comprises a polysilicon load resistor.

REFERENCES:
patent: 4271487 (1981-06-01), Craycraft et al.
patent: 4797717 (1989-01-01), Ishibashi et al.
patent: 4910576 (1990-05-01), Campbell
patent: 5079611 (1992-01-01), Ikeda et al.
patent: 5107322 (1992-04-01), Kimura
patent: 5111069 (1992-05-01), Deierling et al.
patent: 5132240 (1992-07-01), Shimumura et al.
patent: 5270243 (1993-12-01), Tuan et al.
patent: 5281843 (1994-01-01), Ochii et al.
patent: 5296726 (1994-03-01), MacElwee
patent: 5323047 (1994-06-01), Nguyen
patent: 5359226 (1994-10-01), De Jong
patent: 5391894 (1995-02-01), Itabashi et al.

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