Method for dividing semiconductor film formed on a substrate int

Metal treatment – Compositions – Heat treating

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29572, 29576B, 148175, 148187, 357 30, H01L 3106, H01L 21265

Patent

active

046505245

ABSTRACT:
An amorphous silicon film having a PIN junction inside in parallel to the film surface is formed extending continuously over transparent film electrodes in each plurality of regions being formed and spaced from each other on one main surface of a light transmissive substrate. A laser beam having a wave length covering a substantially ultraviolet rays region and a visible rays region is irradiated from the other main surface side of the light transmissive substrate to an adjacent spacing portion where the amorphous silicon film is to be divided and the amorphous silicon film lying therein is removed, thus the amorphous silicon film is divided into each plurality of regions. An aluminum electrode film is formed continuously covering the amorphous silicon film portions in each region. The laser beam is irradiated from the other main surface side of the light transmissive substrate to the adjacent spacing portion where the aluminum electrode film is to be divided and the aluminum electrode film lying therein is removed, thus the aluminum electrode film is divided in each plurality of regions. The divided aluminum film electrodes are connected to the transparent film electrodes in the adjacent regions, accordingly a plurality of photoelectric converting regions formed on the light transmissive substrate are connected in series.

REFERENCES:
patent: 4281208 (1981-07-01), Kuwano et al.
patent: 4292092 (1981-09-01), Hanak
patent: 4456490 (1984-06-01), Dutta et al.
patent: 4514579 (1985-04-01), Hanak
patent: 4517403 (1985-05-01), Morel et al.
patent: 4517733 (1985-05-01), Hamano
patent: 4528065 (1985-07-01), Yamazaki
patent: 4534804 (1985-08-01), Cade

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