Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1995-04-06
1998-02-17
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257556, H01L 2900, H01L 27082
Patent
active
057194319
ABSTRACT:
In one embodiment, an integrated driver circuit configuration for an inductive load element includes a highly doped substrate of p-conductivity, an epitaxial layer having the same conductivity type as the substrate and being applied on the substrate, an output terminal for connecting the inductive load element, a plurality of insulated wells being disposed in the epitaxial layer and having a well associated with the output terminal, and an n-doped region laterally surrounding the well associated with the output terminal. In another embodiment, the integrated driver circuit configuration for the inductive load element includes a highly doped substrate of p-conductivity, an epitaxial layer applied on the substrate, a plurality of insulated wells having an n-doped well, an n-doped region laterally surrounding the n-doped well, and an output terminal for connecting the inductive load element. An npn transistor has an emitter formed by the n-doped well, a collector formed by the n-doped region, and a base formed by the epitaxial layer.
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Greenberg Laurence A.
Lerner Herbert L.
Ngo Ngan V.
Siemens Aktiengesellschaft
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