Polysilicon multiplexer for two-dimensional image sensor arrays

Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit

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348303, H01J 4014

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055369324

ABSTRACT:
A polysilicon multiplexer for two-dimensional image sensor arrays is provided. Multiplexing the gate and data lines of a two-dimensional image sensor array greatly simplifies the packaging required for large devices with high resolution. The multiplex transistors are polysilicon for required read out speed. The multiplexer structure of polysilicon TFTs and sensor arrays of amorphous silicon TFTs are formed on a single substrate wherein the polysilicon TFTs are formed by laser crystallization on an outer periphery of the substrate.

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