Method for shallow junction formation

Details Method for shallow junction formation Method for shallow junction formation

1995-06-05

1996-10-29

Fourson, George

Fishing, trapping, and vermin destroying

437161, 437164, 437174, 437907, 437231, 437950, 148DIG90, H01L 2128

Patent

active

055696244

ABSTRACT:
A doping sequence that reduces the cost and complexity of forming source/drain regions in complementary metal oxide silicon (CMOS) integrated circuit technologies. The process combines the use of patterned excimer laser annealing, dopant-saturated spin-on glass, silicide contact structures and interference effects creates by thin dielectric layers to produce source and drain junctions that are ultrashallow in depth but exhibit low sheet and contact resistance. The process utilizes no photolithography and can be achieved without the use of expensive vacuum equipment. The process margins are wide, and yield loss due to contact of the ultrashallow dopants is eliminated.

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"Selective Annealing Utilizing Single Pulse Examiner Laser Irradiation . . . ", H. Tsukamoto et al., Jpn. J. Appl. Phys., vol. 32 (1993), pp. L-967-L-970.
"Fabrication of sub-40-nm p-n junctions for 0.18 .mu.m MOS device applications . . . ", K. H. Weiner et al., SPIE, vol. 2091, pp. 63-70 (1994).

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