Method for planarizing insulating film

Fishing – trapping – and vermin destroying

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437 60, 437195, 437228, 437231, H01L 218242

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active

055696180

ABSTRACT:
A method for manufacturing a semiconductor device is disclosed in which an insulating film is formed on a semiconductor substrate, elements are formed on the insulating film, the first oxide film is formed on the surface of the insulating film in the elements using plasma-enhanced chemical vapor deposition, a second oxide film is formed on the surface of the first oxide film using atmospheric-pressure chemical vapor deposition, a third oxide film is formed on the surface of the second oxide film using plasma-enhanced chemical vapor deposition, and organic spin-on-glass film is formed on the surface of the third oxide film, and etched back is performed until the organic spin-on-glass film is removed.

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Morimoto, S., and Grant, S.Q., "Manufacturable and Reliable Spin-On-Glass Planarization Process for 1 .mu.m CMOS Double Layer Metal Technology, " pp. 411-417 (Date Unknown).

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