Semiconductor-on-insulator structure and method for producing sa

Details Semiconductor-on-insulator structure and method for producing sa Semiconductor-on-insulator structure and method for producing sa

1994-10-14

1996-10-29

Robinson, Ellis

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428428, 428432, 428446, 428696, 428699, 428700, 437235, 437245, 437246, B32B 1706

Patent

active

055695388

ABSTRACT:
In one form of the invention, a method is disclosed for fabricating a semiconductor-on-insulator structure comprising the steps of: forming an insulator layer 22; forming a layer 24 comprising boron (B) on the insulator layer 22; and forming a semiconductor layer 26 on the layer 24 comprising B.

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patent: 4772568 (1988-09-01), Jastrzebski
patent: 4935092 (1990-06-01), Morimoto et al.
patent: 5229332 (1993-07-01), Cho
patent: 5453399 (1995-09-01), Cho
Asano et al, in "Heteroepitaxial Si, Ge, and GaAs on insulator structures on Si substrates by use of fluorides insulators" Materials Research Society Symposium Proceedings, vol. 91, (1987), pp. 337-348.
Copel et al, "Surfactants in Epitaxial Growth" Physical Review Letters, vol. 63, No. 6, Aug. 7, 1989 pp. 632-635.
Cao et al, "Microscopic Study of the Surfactant-assisted Si, Ge epitaxial growth" Appl. Phys. Lett 61, 9 Nov. 1992 pp. 2347-2349.
Kanemaru et al, "Improvement of the Quality of Ge Films on CaF.sub.2 /Si(111) Structures by Predeposited Thin Ge Layers" Surface Science 174 (1986) pp. 666-670.

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