Single mirror light-emitting diodes with enhanced intensity

Details Single mirror light-emitting diodes with enhanced intensity Single mirror light-emitting diodes with enhanced intensity

1992-12-28

1994-11-08

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With reflector, opaque mask, or optical element integral...

257 13, 257 94, H01L 29161, H01L 29205, H01L 29225, H01L 3300

Patent

active

053629779

ABSTRACT:
This invention embodies single mirror light-emitting diodes (LEDs) with enhanced intensity. The LEDs are Group III-V and/or II-IV compound semiconductor structures with a single metallic mirror. The enhanced intensity is obtained by placing an active region of the LED having from two to ten, preferably from four to eight, quantum wells at an anti-node of the optical node of the device created by a nearby metallic mirror. Such multiquantum well LED structures exhibit enhanced efficiencies approaching that of a perfect isotropic emitter.

REFERENCES:
patent: 4644378 (1987-02-01), Willians
patent: 4868612 (1989-09-01), Oshima et al.
patent: 5027164 (1991-06-01), Awano
patent: 5089860 (1992-02-01), Deppet et al.
patent: 5229627 (1993-07-01), Kosaka
D. G. Deppe et al., Optically-Coupled Mirror-Quantum Well InGaAs-GaAs Light Emitting Diode, Electronics Letters, vol. 26, No. 20, Sep. 27, 1990, pp. 1665-1666.

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