Isolation structure formation for semiconductor circuit fabricat

Details Isolation structure formation for semiconductor circuit fabricat Isolation structure formation for semiconductor circuit fabricat

1995-08-07

1996-07-16

Dang, Trung

Fishing, trapping, and vermin destroying

437 63, 437 64, 148DIG50, H01L 2176

Patent

active

055366759

ABSTRACT:
The deposition of oxide over a semiconductor substrate to fill trenches provides for simpler isolation processing for semiconductor circuit fabrication. Both shallow and deep trenches are etched in a semiconductor substrate for the formation of both device isolation structures and well isolation structures. Oxide is then deposited using chemical vapor deposition over the substrate, filling both the shallow and deep trenches. The resulting oxide layer over the substrate is then planarized, thus forming shallow and deep trench isolation structures in the substrate.

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