Metal attachment method and structure for attaching substrates a

Details Metal attachment method and structure for attaching substrates a Metal attachment method and structure for attaching substrates a

1998-03-20

2000-06-27

Niebling, John F.

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

H01L 2130, H01L 2146

Patent

active

060806400

ABSTRACT:
A high density integrated circuit structure and method of making the same includes providing a first silicon substrate structure having semiconductor device formations in accordance with a first circuit implementation and metal interlevel lines disposed on a top surface thereof and a second silicon substrate structure having a second circuit implementation and metal interlevel lines disposed on a top surface thereof. The first substrate structure includes a planarized low-K dielectric disposed between the metal interlevel lines and a protective coating separating the metal interlevel lines from is the low-K dielectric, the metal interlevel lines of the first silicon substrate structure have a melting temperature on the order of less than 500.degree. C. and the low-K dielectric having a dielectric K-value in the range of 2.0-3.8. The second substrate structure also includes a planarized low-K dielectric disposed between the metal interlevel lines and a protective coating separating the metal interlevel lines from the low-K dielectric, the metal interlevel lines having a melting temperature on the order of less than 500.degree. C. and the low-K dielectric having a dielectric K-value in the range of 2.0-3.8. Lastly, the first substrate structure is low temperature bonded to the second substrate structure at respective metal interlevel lines of the first and second substrate structures.

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patent: 5780121 (1998-07-01), Endo
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patent: 5804494 (1998-09-01), Mitani et al.
Wolf, S., Silicon Processing for the VLSI Era, vol. II, Lattice Press, pp. 189-190, 1990.

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