Method of patterning photoresist using precision and non-precisi

Details Method of patterning photoresist using precision and non-precisi Method of patterning photoresist using precision and non-precisi

1998-03-10

2000-06-27

Duda, Kathleen

Radiation imagery chemistry: process, composition, or product th

Plural exposure steps

430945, G03F 720

Patent

active

060805331

ABSTRACT:
A method for patterning a layer of photoresist includes the steps of 1) exposing the photoresist through a standard precision mask to define all possible patterns and features, and 2) selecting desired patterns and features with a non-precision targeting energy beam or mask. Consequently, no custom precision masks are required to pattern the various layers of photoresist during the fabrication of application specific integrated circuits (ASICs), thereby reducing both the lead-time and costs for manufacturing ASICs.

REFERENCES:
patent: 5561011 (1996-10-01), Miyazaki
patent: 5885749 (1999-03-01), Huggins
patent: 5919605 (1999-07-01), Uchiyama

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