Semiconductor mask and method of manufacturing the same

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

430 24, 430313, 430321, G03F 900

Patent

active

057189900

ABSTRACT:
A mask and method of manufacturing is disclosed. The mask may include a transparent quartz substrate having light-transmitting regions and light-shielding regions, a light-control layer formed on the substrate excluding a portion corresponding to a light-transmitting region of an edge portion, and a light-shielding layer formed on the light-control layer of an light-shielding region. The method may include the steps of preparing a quartz substrate, forming a light-control layer on the quartz substrate, forming a light-shielding layer on the light-shielding region of the light-control layer, and selectively etching the light-control layer corresponding to light-transmitting regions of an edge portion of the substrate.

REFERENCES:
patent: 5376483 (1994-12-01), Rolfson

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor mask and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor mask and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor mask and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1782935

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.