Method of forming double well substrate plate trench DRAM cell a

Details Method of forming double well substrate plate trench DRAM cell a Method of forming double well substrate plate trench DRAM cell a

1993-06-04

1994-11-08

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 60, 437919, H01L 2170, H01L 2700

Patent

active

053626630

ABSTRACT:
A high density substrate plate DRAM cell memory device and process are described in which a buried well region is formed adjacent to deep trench capacitors such that the substrate region of DRAM transfer FETs can be electrically isolated from other FETs on a semiconductor substrate. The buried region is partially formed by ion implantation and diffusion to intersect the walls of the deep trenches.

REFERENCES:
patent: 4829017 (1989-05-01), Malhi
patent: 5097381 (1992-03-01), Vo

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