Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1996-02-27
1998-02-17
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 89, 117 90, C30B 2520
Patent
active
057187622
ABSTRACT:
A method for vapor-phase growth which allows an epiwafer of a smooth surface free from microroughness to be produced is provided. This method comprises a step of heating up a silicon single crystal substrate in an ambience of an inert gas started at a temperature of less than 800.degree. C. and a step of removing a native oxide film formed on the surface of the silicon single crystal substrate by etching with hydrogen gas in an ambience of hydrogen gas at a temperature of not less than 950.degree. C. and not more than 1190.degree. C. prior to the vapor-phase growth.
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patent: 5221412 (1993-06-01), Kagata et al.
patent: 5365877 (1994-11-01), Kubota
Materials Science and Engineering B, vol. b4, No. 1/4, Oct. 1989, Lausanne, CH Oct. 1989 France.
"Crystalline Defects, Thermal Processing, and Gettering", Wolf, et al; Silicon Processing for the VLSI Era-vol. 1 Process Technology; pp. 45-47.
Habuka Hitoshi
Katayama Masatake
Mayuzumi Masanori
Tate Naoto
Tsunoda Hitoshi
Garrett Felisa
Shin-Etsu Handotai & Co., Ltd.
Snider Ronald R.
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