Lithographic mask, comprising a membrane having improved strengt

Details Lithographic mask, comprising a membrane having improved strengt Lithographic mask, comprising a membrane having improved strengt

1992-12-31

1994-11-08

Ryan, Patrick J.

Stock material or miscellaneous articles

Composite

Of inorganic material

428192, 428210, 428702, 428704, 430 5, 378 35, B32B 900

Patent

active

053625757

ABSTRACT:
A membrane is supported at its edge by an annular, tapered skirt structure. The skirt strengthens the attachment of the membrane to the support ring and reinforces the edge region where the membrane would otherwise tend to fail. Stress concentrations are reduced by providing a skirt or featheredge, on the interior side of the skirt, that meets the membrane at a relatively small effective contact angle. In a preferred embodiment, the membrane is made by depositing a polysilicon layer on the surface of a substrate of silica-based glass. A portion of the substrate is removed by an isotropic, selective etchant, such that a portion of the polysilicon layer remains as a free-standing, tensile film supported by a remaining portion of the substrate.

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Elliot, "Integrated Circuit Fabrication Technology" McGraw Hill, 1982 pp. 246-259.
G. K. Celler, et al., "Masks for x-ray lithography with a point source stepper," J Vac. Sci Technol. B 10(6), Nov/Dec 1992, 3186-3190.
L. E. Trimble et al., SPIE Proceedings vol. 1671, Electron-beam, S-ray, and Ion-Beam Submicrometer Lithographies for Manufacturing II, 8-9, Mar. 1992, p. 317.
L. E. Trimble et al., "Evaluation of polycrystalline silicon membranes on fused silica for x-ray lithography masks," J. Vac. Sci. Technol. B7, (1989) 1675-1679.

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