Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state
Patent
1997-11-20
2000-06-27
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from solid or gel state
117904, 117930, 117200, 427 8, 427 10, 427554, 427539, 438 16, C30B 106
Patent
active
060802367
ABSTRACT:
The invention provides a method of manufacturing a large-area electronic device, for example a flat panel display, comprising thin-film circuit elements, and also laser apparatus for crystallizing a portion of a semiconductor thin-film (1) with a beam (11) of set energy. The energy of the beam (11) is set in accordance with the output from a light detector (22) to regulate the crystallization of a device portion (3,4 and/or 5) of a semiconductor thin film (1) at which the beam (11) is subsequently directed with its set energy. The light detector (22) monitors the surface quality of a previously crystallized portion (2). In accordance with the present invention, the light detector (22) is located at a position outside the specular reflection path (25) of the light returned by the surface area of the crystallized portion (2) and detects a threshold increase (D) in intensity (I.sub.s) of the light (26) being scattered by the surface area of the crystallized portion. This threshold increase (D) occurs when the energy (E.sub.p) of the beam (11) is increased sufficiently to cause the onset of surface roughening.
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Brotherton Stanley D.
McCulloch David J.
Kunemund Robert
U.S. Philips Corporation
Wieghaus Brian J.
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