Semiconductor on insulator edge doping process using an expanded

Details Semiconductor on insulator edge doping process using an expanded Semiconductor on insulator edge doping process using an expanded

1985-07-24

1987-03-17

Saba, William G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29578, 29580, 148 15, 148175, 148187, 148188, 148DIG106, 148DIG111, 148DIG131, 148DIG150, 156643, 357 4, 357 237, 357 2311, 357 2312, H01L 21205, H01L 2186

Patent

active

046496262

ABSTRACT:
Edge conduction in a silicon-on-sapphire transistor is minimized by a process which permits precise doping of the edge channel regions of the transistor. The silicon island (19) containing the transistor (24) is precisely doped around its edges by ion implanting an epitaxial silicon layer (13) on a sapphire substrate (11), with an oxide mask (29) covering, with the exception of a narrow peripheral edge (37), the portion of the silicon which is eventually to form the island (19') on which the transistor is to be constructed. The mask (29) is then expanded by the addition of a sleeve (43) to cover the additional peripheral edge region (37) in the silicon. When the silicon is subsequently etched using the expanded oxide pattern 45 as a mask, the periphery of the remaining silicon will be doped to a predetermined depth (37) corresponding to the width of the sleeve (43).

REFERENCES:
patent: 3890632 (1975-06-01), Ham et al.
patent: 4054895 (1977-10-01), Ham
patent: 4252574 (1981-02-01), Fabula
patent: 4256514 (1981-03-01), Pogge
Feth et al., "Thin-Base Lateral PMP Transistor Structure" I.B.M. Tech. Discl. Bull., vol. 22, No. 7, Dec. 1979, pp. 2939-2942.

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