1987-08-11
1990-02-27
James, Andrew J.
357 36, 357 51, 357 59, H01L 2972
Patent
active
049050788
ABSTRACT:
A semiconductor device includes a semiconductor layer provided above a pair of bipolar transistors formed in a surface region of a semiconductor body. Schottky barrier diodes and resistors are formed in the semiconductor layer. The pair of bipolar transistors, the Schottky barrier diodes and the resistors are electrically connected to constitute a bipolar memory. Since the Schottky barrier diodes and the resistors can be formed above the bipolar transistors, an area required for the memory cell can be made greatly small and the occurrence of an hindrance caused by .alpha. particles is minimal.
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Homma Noriyuki
Nakamura Tohru
Sagara Kazuhiko
Tamaki Yoichi
Crane Sara W.
Hitachi , Ltd.
James Andrew J.
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