Method for fabricating CMOS devices

Details Method for fabricating CMOS devices Method for fabricating CMOS devices

1984-11-23

1987-04-14

Ozaki, George T.

Metal working

Method of mechanical manufacture

Assembling or joining

29576W, 29577C, 148187, H01L 2138, H01L 21461

Patent

active

046567305

ABSTRACT:
A new method for fabricating CMOS devices, as well as the resulting devices, is disclosed. The method involves incorporating dopants into a semiconductor substrate through a region of the substrate surface, and diffusing the implanted dopants into the substrate to form a tub. Prior to the diffusion step, a trench is formed in, and extending beneath, the surface which partially or completely encircles the region. The trench serves to prevent the formation, or reduce the size, of a relatively low dopant concentration region, which would otherwise lead to undesirable leakage currents in the completed CMOS device, and prevents latchup.

REFERENCES:
patent: 4435896 (1984-03-01), Parillo et al.
patent: 4459741 (1984-07-01), Schwabe et al.
patent: 4477310 (1984-10-01), Park et al.
patent: 4493740 (1985-01-01), Komeda
patent: 4532696 (1985-08-01), Iwai
patent: 4534824 (1985-08-01), Chen
patent: 4536945 (1985-08-01), Gray et al.
"Directions in CMOS Technology," S. Kohyama et al., IEEE International Electron Device Meeting, Technical Digest, Dec. 6, 1983, pp. 151-155.

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