Semiconductor laser device having uniform and reproducible laser

Details Semiconductor laser device having uniform and reproducible laser Semiconductor laser device having uniform and reproducible laser

1992-03-24

1994-02-22

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

052894878

ABSTRACT:
An optical waveguide layer formed on a semiconductor substrate is etched to form two parallel grooves, thereby obtaining a low ridge having a relatively small height along the longitudinal direction of the grooves. Thereafter, a current blocking layer and a third cladding layer are formed. For this reason, the dimensions such as the height and width of the ridge can be controlled with high precision, and crystal growth for the current blocking layer can be relatively easily performed. Therefore, crystal defects are not concentrated near the ridge, and laser characteristic values fall within a sufficiently allowable range which cannot be obtained by the conventional laser device. A reliable laser device capable of obtaining desired laser characteristics with excellent uniformity and reproducibility can be obtained.

REFERENCES:
patent: 4910744 (1990-03-01), Yoshida et al.
patent: 4949352 (1990-08-01), Plumb

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