Plasma processing apparatus

Details Plasma processing apparatus Plasma processing apparatus

1998-10-15

2000-06-27

Beck, Shrive

Coating apparatus

Gas or vapor deposition

With treating means

156345, C23C 1600, H05H 100

Patent

active

060793570

ABSTRACT:
An inductively coupled type dry etching apparatus has an RF antenna disposed on the ceiling wall of a process chamber. A susceptor is arranged in the process chamber, for mounting a semiconductor wafer thereon. The ceiling wall has a matrix of alumina ceramic, and heat generating elements of a salt of a transition metal oxide, which are dispersed in the matrix and capable of self-generating heat by an RF electric field.

REFERENCES:
patent: 5433812 (1995-07-01), Cuomo et al.
patent: 5580385 (1996-12-01), Paranjpe et al.

Affiliated with

Also associated with

Rating

Plasma processing apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma processing apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma processing apparatus will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1775224