Fishing – trapping – and vermin destroying
Patent
1988-02-29
1989-01-31
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437192, 437200, 357 71, H01L 21283
Patent
active
048015598
ABSTRACT:
A semiconductor device having a conductor line free of cracks is produced by forming an insulating layer on a semiconductor substrate, opening a contact hole in the insulating layer, forming a contact electrode comprising a high-melting point metal or a silicide of a high-melting point in the contact hole, filling a gap between the contact electrode and the side of the contact hole with polycrystalline silicon to form a substantially level surface, forming a conductor line on the level surface, and alloying the polycrystalline silicon with the conductor line and/or the contact electrode by heating.
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F. Barson, "Modified polysilicon emitter process," IBM Technical Disclosure Bulletin, vol. 22 (1980) pp. 4052-4053.
IBM Technical Disclosure Bulletin, "Dual Insulators for Planar Multilevel Interconnections", Gniewek et al., vol. 21, No. 3, Aug. 1978, pp. 1052-1053.
Fujitsu Limited
Hearn Brian E.
Quach T. N.
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