Patent
1983-11-29
1986-05-13
Edlow, Martin H.
357 30, 357 31, 357 32, 357 58, 357 41, 357 45, 357 2, H01L 2980
Patent
active
045890030
ABSTRACT:
A solid state image sensor including a substrate, an epitaxial layer grown on the substrate, an opaque bottom electrode applied on the epitaxial layer, a photoconductor film deposited on the bottom electrode, a transparent surface electrode applied on the photoconductor film, a reading-out SIT formed in the epitaxial layer and a resetting MOS-FET also formed in the epitaxial layer. A gate diffusion region of the reading-out SIT is connected to the bottom electrode and a source region of resetting MOS-FET is also connected to the bottom electrode. A source electrode connected to the source region of the reading-out SIT is extended under the bottom surface, while an insulating layer is interposed therebetween to form a capacitance. Charge carriers stored in the gate region of the reading-out SIT can be read-out to derive a large output voltage due to the amplifying function of the reading-out SIT.
REFERENCES:
patent: 4363963 (1982-12-01), Ando
patent: 4377817 (1983-03-01), Nishizawa et al.
patent: 4419604 (1983-12-01), Ishioka et al.
patent: 4429325 (1984-01-01), Takasaki et al.
Physics of Semiconductor Devices, pp. 313, 433, 434, Author--S. M. Sze.
Mizusaki Takashi
Nishizawa Jun-ichi
Yamada Hidetoshi
Yusa Atsushi
Edlow Martin H.
Mintel William A.
Olympus Optical Co,. Ltd.
LandOfFree
Solid state image sensor comprising photoelectric converting fil does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Solid state image sensor comprising photoelectric converting fil, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Solid state image sensor comprising photoelectric converting fil will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1773015