Method of making devices having closely spaced electrodes

Details Method of making devices having closely spaced electrodes Method of making devices having closely spaced electrodes

1973-12-26

1976-10-26

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

29590, 29591, 204 15, 357 24, B01J 1700

Patent

active

039875385

ABSTRACT:
A method is provided for fabricating three-phase charge coupled devices having closely spaced electrodes. A two-level metalization technique is employed, the levels of metal being separated by an insulative layer of oxide. The oxide layer is produced by anodizing a portion of the first metal layer through diodes, applying a voltage to the back of the silicon substrate slice. The diodes are forward biased for the anodization step, and are reverse biased during use of the device, so as not to interfere with its operation.

REFERENCES:
patent: 3738917 (1973-06-01), Spath
patent: 3756924 (1973-09-01), Collins
patent: 3775262 (1973-11-01), Heyerdahl

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