Method of forming a sidewall on a semiconductor element

Details Method of forming a sidewall on a semiconductor element Method of forming a sidewall on a semiconductor element

1992-06-23

1995-10-31

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 41, 437 44, H01L 21465

Patent

active

054628962

ABSTRACT:
A method fabricates a semiconductor device having a sidewall made from an insulation film at each side of a gate electrode portion. The method forms a polysilicon gate electrode (11a) on a gate oxide film (10) in a predetermined region on an n.sup.- epitaxial layer (2). A CVD silicon oxide film (15) having a predetermined thickness is formed over the polysilicon gate electrode material (11a) on the n.sup.- epitaxial layer (2). A magnetron enhanced reactive ion etching apparatus is used to etch the CVD silicon oxide film (15) while pouring a CHF.sub.3 gas made by coupling carbon, hydrogen, and fluorine and an N.sub.2 gas onto the etched material, such that the CVD silicon oxide film (15) is left only at each side of the polysilicon gate electrode material (11a), to form a sidewall (16). To avoid electrodes of the magnetron enhanced reactive ion etching apparatus from staining, CHF.sub.3 /He/N.sub.2 /O.sub.2 may be used for etching.

REFERENCES:
patent: 4419809 (1983-12-01), Riseman et al.
patent: 4528066 (1985-07-01), Merkling, Jr. et al.
patent: 4577391 (1986-03-01), Hsia et al.
patent: 4657628 (1987-04-01), Holloway et al.
patent: 4764245 (1988-08-01), Grewal
patent: 4879254 (1989-11-01), Tsuzuki et al.
patent: 4879257 (1989-11-01), Patrick
patent: 4886765 (1989-12-01), Chen et al.
patent: 4906589 (1990-03-01), Chao
patent: 4998151 (1991-03-01), Korman et al.
patent: 5082796 (1992-01-01), El-Diwany et al.
patent: 5094712 (1992-03-01), Becker et al.
patent: 5160398 (1992-11-01), Yanagida
patent: 5169487 (1992-12-01), Langley et al.
patent: 5234864 (1993-08-01), Kim et al.
"Nikkei Micro Device", (Dec. 1986) pp. 105-125 and partial translation.
"Semiconductor World", (Jul. 1987), pp. 131-136 and partial translation.

Affiliated with

Also associated with

Rating

Method of forming a sidewall on a semiconductor element does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a sidewall on a semiconductor element, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a sidewall on a semiconductor element will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1772106