Method of making semiconductor device comprising a titanium nitr

Details Method of making semiconductor device comprising a titanium nitr Method of making semiconductor device comprising a titanium nitr

1993-08-23

1995-10-31

Quach, T. N.

Fishing, trapping, and vermin destroying

437190, 437192, 148DIG20, H01L 21283

Patent

active

054628954

ABSTRACT:
In a method of forming an adhesive layer for a blanket layer filling a contact hole in a semiconductor device, a Ti film, Ti-rich TiN film or a TiSi.sub.x (x being 1.1 to 1.8) film is formed, and then a TiN (stoichiometric) film is formed. The Ti film, Ti-rich TiN film or TiSi.sub.x is annealed to be converted into TiSi.sub.2 film. The formation of the Ti film, Ti-rich TiN film or a TiSi.sub.x is performed by a continuous CVD process.

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Bernard, C., et al., "Chemical Vapor Deposition of Refractory Metal Silicides for VLSI Metallization" Solid State Technology, Feb. 1989, pp. 79-84.

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